Researchers at the University of Michigan are embarking on a transformative project that promises to revolutionize the field of high-performance semiconductors, particularly those made from silicon carbide (SiC). This ambitious initiative, which has been funded with an initial $2.4 million and could receive up to $7.5 million over three years, aims to create heat-resistant sensing and computing chips that could have implications across various sectors including aerospace, automotive, renewable energy, and defense. The collaborative effort illustrates the growing recognition of SiC technology’s potential to address the limitations of traditional silicon-based electronics, particularly in extreme operating conditions.
SiC is unique in its ability to withstand significantly higher voltages, temperatures, and radiation levels compared to traditional silicon. For instance, researchers at NASA’s Glenn Research Center have been investigating SiC’s viability as a high-performance semiconductor for several decades. Their groundbreaking work has culminated in the production of SiC circuits that can withstand temperatures of up to 930 degrees Fahrenheit for extended durations, demonstrating its capabilities in extreme environments such as space exploration, particularly for missions targeted at the surface of Venus.
The project’s focus on scaling NASA’s existing technology and processes to larger wafer sizes indicates a clear intention to increase the accessibility and usability of SiC chips for a wider array of applications. As the need for advanced electronics capable of functioning in high-temperature environments becomes increasingly essential across multiple industries, collaborative efforts involving major players such as GE Aerospace Research, Wolfspeed, and Ozark Integrated Circuits will be pivotal in achieving these goals.
A core part of the project is the enhancement of SiC’s applications in aerospace. The work aims to develop innovative electronics and sensors that could improve the reliability and efficiency of aircraft engines. Notably, the project will demonstrate a packaged actuator designed for aerospace applications. These actuators are critical for control systems, converting electrical signals into mechanical motion, thereby enhancing the overall functionality of aerospace technologies.
Through the successful scaling of production processes and integration methods, the project aims to lead to significant advancements in semiconductor technology, particularly within the Department of Defense’s engine platforms. The collaborative effort will enhance sensor and actuator functionalities, making them more resilient and capable of operating under extreme conditions that current silicon electronics cannot withstand. This evolution in semiconductor technology could have far-reaching implications, including the advancement of hypersonic aircraft systems that operate at unprecedented temperatures.
In partnership with industry experts, such as Ozark Integrated Circuits, the project will focus on refining packaging and integration processes. Ozark IC’s previous work with NASA and GE Aerospace has laid a foundation for the successful transition of SiC technology into practical applications. Their expertise, combined with NASA’s and GE Aerospace’s pioneering efforts in semiconductor research, positions the project to create a robust framework for the commercialization of SiC technology.
A central goal of the initiative is to ensure that the technology developed is not only scientifically advanced but also readily implementable in commercial settings. As part of this effort, the University of Michigan’s engineering researchers will work to establish a standardized process development kit and transistor models that will provide the necessary tools for integrated circuit designers. This accessibility is critical in democratizing SiC technology, enabling wider adoption across different sectors.
By creating libraries of commonly used circuit blocks, the researchers aim to streamline the design process, thus reducing the learning curve for new users. Enhanced design tools, including open electronic design automation software, will facilitate the integration of SiC technology into various applications, making it easier for engineers to develop innovative products. This initiative not only promotes innovation but also encourages collaboration among diverse stakeholders involved in the development of next-generation electronics.
As the project progresses, the Michigan Engineering team will rigorously test the devices designed by NASA and GE Aerospace, while also ensuring that the integration processes developed by Ozark IC meet industry standards. This collaborative approach will lead to the standardization of various components, thereby ensuring that the resultant technology is reliable and efficient.
In addition to the engineering challenges, the initiative reflects a critical need for domestic production of advanced semiconductors. The statement made by Becky Peterson, the principal investigator of the project, underscores the necessity for advanced materials that can handle challenging environments without compromising performance. This focus on domestic production aligns with broader goals of technological independence and innovation within the United States.
In the context of the Microelectronics Commons program established by the CHIPS Act, this project stands as a testament to the commitment of universities, government, and industry partners to elevate the country’s status in microelectronics. By collaborating to push the frontiers of semiconductor technology, the initiative aims to position the United States as a leader in the global competition for advanced electronics, thereby contributing to national security and technological advancement.
Ultimately, the undertaking at the University of Michigan embodies a confluence of expertise across academia and industry, working towards a common goal: to harness the unique properties of silicon carbide and drive forward the next generation of microelectronics. As the project unfolds and advances in SiC chip technology materialize, the implications for aerospace, defense, automotive, and renewable energy sectors will be profound, revealing new possibilities for innovation and efficiency.
Subject of Research: Development of Heat-Resistant Silicon Carbide Semiconductor Technology
Article Title: Advancing Semiconductor Technology: A Collaborative Approach to Silicon Carbide Innovations
News Publication Date: October 2023
Web References: https://docs.google.com/document/d/1GDnXwPt7LzToaYmm0-o7JzTElNeS9uHAfW8vcqhW-lw/edit?tab=t.0
References: Not Applicable
Image Credits: Not Applicable
Keywords
Silicon carbide, semiconductors, University of Michigan, NASA, aerospace technology, high-performance electronics, microelectronics, CHIPS Act, defense, renewable energy, engine reliability, actuator technology, collaborative research.
