George Mason Engineer to Probe Defects in SiC and III-N Materials for High-Voltage Devices

V. Rao Mulpuri, a professor of electrical and computer engineering at George Mason University’s College of Engineering and Computing, has received funding for a project investigating fundamental defects in silicon carbide (SiC) and III-N materials and how those defects can be mitigated for high-voltage applications. The project, titled “Investigation of fundamental defects and their mitigation in SiC and III-N materials for High Voltage applications,” is supported by $80,000 from the Naval Research Laboratory, with funding beginning in September 2026 and running through September 2027.

The work is aimed at helping create materials for silicon carbide and gallium nitride (GaN)-based devices. Both SiC and III-N materials belong to the family of wide bandgap semiconductors, which are of particular interest for high-voltage electronics because of their physical properties. Defects within these materials can affect the performance of devices operating in the 1kV to 20kV range, making the identification and control of such flaws a central concern for the project.

To investigate these material issues, Mulpuri will draw on a set of specialized characterization facilities. These include X-ray topography, laser UV photoluminescence, and high-resolution 9kW 2D-XRD, along with other characterization tools. The techniques are intended to reveal material issues that have a direct impact on devices operating between 1 and 20 kilovolts, a range relevant to high-voltage power electronics.

The announcement, issued as a grant and award announcement by George Mason University on October 27, 2026, describes the effort as fundamental research into defects and their mitigation rather than a device development program. George Mason University is Virginia’s largest public research university, enrolling more than 40,000 students from 130 countries and all 50 states. The university notes that in 2023 it launched Mason Now: Power the Possible, a $1 billion comprehensive campaign supporting student success, research, innovation, community, and stewardship.

Subject of Research: Defect investigation and mitigation in silicon carbide and III-N wide bandgap materials for high-voltage devices

Article Title: Mulpuri investigating fundamental defects & their mitigation in silicon carbide & III-N materials for high voltage applications

Article References: Mulpuri investigating fundamental defects & their mitigation in silicon carbide & III-N materials for high voltage applications. Original publication (Bibliographic details unavailable.)

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Keywords: silicon carbide, gallium nitride, wide bandgap semiconductors, high-voltage devices, material defects, X-ray topography, photoluminescence, machine learning, Naval Research Laboratory, George Mason University, power electronics, materials characterization