Researchers scale heat-resistant silicon carbide transistors to 6-inch wafers
A Kyoto University and Phenitec Semiconductor team fabricated silicon carbide JFETs on a 6-inch wafer, achieving threshold-voltage standard deviation below ...
A Kyoto University and Phenitec Semiconductor team fabricated silicon carbide JFETs on a 6-inch wafer, achieving threshold-voltage standard deviation below ...
A first-of-its-kind life cycle and technoeconomic analysis of twenty crystal-defect combinations finds that hexagonal boron nitride with laser writing offers ...
Deep beneath the surface of some of the world's most demanding physics experiments, a quiet revolution in sensing technology is ...
A new review maps the electromagnetic, mechanical, thermal, and control challenges that define the limits of ultra-high-speed electric drive systems ...
Mesoscale simulations reveal that the connectivity of particle-rich networks, not just ceramic content, decides whether silicon carbide-aluminum composites strengthen or ...
University of Chicago researchers have built a first-principles framework that fully models how spin defects shed energy, revealing a previously ...
Researchers at Jilin University report that micro-scale copper and nano-scale silicon carbide particles, combined through ball milling and friction stir ...
Researchers report that nickel composites reinforced with hybrid micro- and nanosized silicon carbide particles reached 1526 MPa tensile strength and ...
Researchers fabricated porous silicon nitride–silicon carbide composites at just 1200 °C using phosphoric acid, achieving a remarkably low friction coefficient ...
A new gallium nitride transistor design uses a polarization-based superjunction to distribute electric fields and push average breakdown field toward ...
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© 2025 Scienmag - Science Magazine