In a groundbreaking advancement poised to reshape the landscape of nanoscale electronics, a team of researchers led by Kim, Park, and Jin has unveiled critical insights into quantum transport phenomena occurring within nanosheet gate-all-around (NS GAA) transistors. Published in the journal Communications Engineering in early 2025, their study delves deep into the intricate behavior of electrons as they traverse constricted pathways in these next-generation transistor architectures. This work not only pushes the frontiers of quantum mechanics applied to semiconductor devices but also lays a foundational understanding crucial for the continued progression of Moore’s Law and the quest for smaller, faster, and more energy-efficient computing units.
At the heart of modern nanoelectronics lies the persistent challenge of overcoming scaling limitations that traditional transistor architectures face as dimensions shrink toward atomic scales. The gate-all-around transistor, particularly those leveraging nanosheet geometries, represents a paradigm shift from conventional FinFET structures by providing superior electrostatic control. However, as the conduction channels narrow significantly, quantum mechanical effects such as tunneling and electron confinement become dominant, profoundly affecting device performance. The researchers’ focus on how quantum transport evolves when electrons negotiate a constriction inside nanosheet GAA transistors is therefore of immense significance both academically and technologically.
The team employed a combination of sophisticated modeling techniques and experimental validation to explore the nature of electron flow under these nanoscale constrictions. Their approach marries the application of quantum transport theory—grounded in non-equilibrium Green’s function formalism—with state-of-the-art fabrication methods to realize nanosheet devices featuring precisely engineered constrictions. These minute structural bottlenecks mimic realistic operational conditions where current must pass through regions smaller than the electron wavelength, invoking phenomena rarely encountered in classical semiconductor electronics. Such meticulous integration of theory and practice enables the researchers to capture nuanced subtleties governing electron dynamics at nanometric scales.
One of the standout revelations of the study was the identification of unique resonant tunneling effects occurring within the nanosheet constriction. As electrons approach the narrowed channel, their wave functions undergo complex interference patterns that either enhance or suppress transmission probabilities depending on energy and geometric parameters. These resonances are highly sensitive to the atomic-scale configuration of the constriction, and by tweaking its dimensions, the team demonstrated the capacity to modulate current flow with unprecedented precision. This fine control over quantum transport mechanisms paves the way for novel transistor functionalities leveraging quantum coherence and interference, aspects traditionally overlooked in classical device engineering.
Furthermore, the research highlights the impact of electron-phonon interactions in this confined geometry, revealing that lattice vibrations play a non-trivial role in damping quantum coherence across the constriction. Through detailed theoretical treatment and corroborating experiments, the study elucidates how these inelastic scattering processes influence device behavior, adding layers of complexity to electron transport not accounted for by simpler ballistic models. Understanding these interactions is critical for optimizing transistor performance, particularly concerning power dissipation and thermal stability, which directly affect the reliability of nanoscale devices under real-world operating conditions.
From a materials science perspective, the investigation underscores the importance of atomic-level control and material quality in defining quantum transport characteristics. Variations in material composition, interface roughness, and defect densities emerge as potential barriers or facilitators of electron passage through the constricted nanosheet channels. The findings advocate for refined fabrication techniques capable of achieving angstrom-level uniformity to minimize variability and bolster coherence effects that enhance device functionality. This emphasis on material precision aligns with broader trends in semiconductor manufacturing, where atomic-scale engineering is rapidly becoming a prerequisite for next-generation device architectures.
Another dimension of the study delves into the energetics governing electron distribution inside the constricted nanosheets. By mapping out the band structure alterations induced by geometrical confinement and electrostatic gating, the researchers provide a comprehensive picture of how energy barriers and quantum wells emerge within these minuscule components. These electronic landscapes are pivotal in determining charge carrier mobility and switching speeds, key metrics for transistor efficiency. The team’s insights into tuning band alignments through gate voltages and structural parameters reveal practical pathways to optimize device response dynamically in operational circuits.
Importantly, the implications of this work extend beyond traditional digital logic applications. The precise modulation of quantum transport through nanosheet constrictions heralds promising opportunities for quantum information processing, sensor technologies, and novel analog computing paradigms. Devices exploiting controllable quantum interference could form the basis of ultra-sensitive detectors, low-noise amplifiers, or components in quantum computing circuits where coherence preservation is paramount. The multidisciplinary character of this research bridges condensed matter physics, electrical engineering, and nanotechnology, fostering innovations across several emerging fields.
Technological scalability figures prominently in the discussion, as the authors address the challenges of integrating these constricted nanosheet transistors into large-scale semiconductor manufacturing processes. While laboratory-scale demonstrations showcase remarkable control over quantum phenomena, translating these advances into mass production requires addressing yield, reproducibility, and compatibility with existing complementary metal-oxide-semiconductor (CMOS) platforms. Nonetheless, the demonstrated theoretical and experimental frameworks establish a roadmap for future innovation, encouraging industrial stakeholders to invest in fabrication technologies that embrace quantum-mechanical device concepts.
The study also revisits classical transport assumptions, contrasting ballistic, diffusive, and localized regimes observed in nanosheet devices under varying constriction geometries and temperatures. This comprehensive analysis frames a richer understanding of electron dynamics, guiding device engineers in selecting design parameters tailored to specific performance goals. By articulating this nuanced perspective on transport regimes, the research contributes a vital knowledge base essential for confronting the ever-shrinking scales of semiconductor devices without sacrificing operational integrity.
In addition, the authors explore the role of electrostatic gating in modulating the constriction potential landscape, demonstrating the dynamic tunability of electron transmission pathways. By applying gate voltages, the effective width and height of the conduction channel can be modified in situ, allowing real-time control over quantum transport properties. This ability to electrically steer quantum behavior introduces a new dimension to transistor functionality, potentially enabling adaptive circuits that respond intelligently to environmental or computational demands.
Moreover, the research touches upon the challenges posed by variability and noise stemming from quantum fluctuations and atomic-scale disorder within the nanosheet constrictions. Recognizing these sources of device instability is critical for developing mitigation strategies such as error correction, redundancy, or design optimizations to ensure robust performance in practical applications. The authors’ quantitative treatment of fluctuation effects paves the way for future inquiries into device reliability and error tolerance in quantum-dominated regimes.
Intriguingly, the investigation also hints at potential compatibility with emerging two-dimensional materials, suggesting that nanosheet gate-all-around transistors may one day incorporate novel semiconductors like transition metal dichalcogenides or graphene derivatives. Such materials promise even greater control over electron confinement and transport, potentially amplifying the quantum effects observed. By contextualizing their findings within a broader materials landscape, the researchers invite exploration into hybrid devices merging traditional silicon technology with next-generation semiconductors.
The implications for power efficiency cannot be overstated. As conventional transistor scaling encounters diminishing returns due to leakage currents and short-channel effects, the ability to harness quantum transport through nanosheet constrictions offers pathways to significantly reduce power consumption. By enabling sharper switching behaviors and suppressing undesired conduction channels through quantum interference, these devices could revolutionize low-power electronics, extending battery lives and decreasing the environmental footprint of computational infrastructure.
Finally, the study serves as an inspiring blueprint for harnessing quantum mechanics in practical electronic devices, revitalizing interdisciplinary collaboration between physicists, engineers, and material scientists. The elegant conjunction of theoretical rigor, experimental finesse, and technological foresight embodied by Kim, Park, Jin, and their colleagues’ work represents a pivotal stride toward the quantum era of semiconductor electronics, where classical limitations give way to unprecedented control over electronic behavior at the smallest scales.
Subject of Research: Quantum transport phenomena in nanosheet gate-all-around transistors featuring nanoscale constrictions.
Article Title: Quantum transport through a constriction in nanosheet gate-all-around transistors
Article References:
Kim, K.Y., Park, HH., Jin, S. et al. Quantum transport through a constriction in nanosheet gate-all-around transistors. Commun Eng 4, 92 (2025). https://doi.org/10.1038/s44172-025-00435-0
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