As silicon-based technology nears its physical limits in terms of energy efficiency, speed, and density, the quest for alternative materials has gained significant momentum. Among various candidates, van der Waals indium selenides, notably indium selenide (InSe) and diselenide (In₂Se₃), are drawing attention for their potential to revolutionize next-generation low-power electronics. These materials exhibit a range of exceptional properties, making them viable for various applications in high-performance computing and memory storage. The characteristics of indium selenides not only promise enhanced performance but also introduce unique functionalities unseen in traditional semiconductor technologies.
One of the remarkable features of indium selenides is their exceptional electron mobility, which can exceed 1,000 cm² V⁻¹ s⁻¹. This high mobility enables faster charge transport, crucial for the operation of ultra-scaled transistors needed in modern computing applications. As the demand for rapid processing speeds increases, enabling technologies that can deliver higher mobility will play a critical role in enhancing the performance of electronic devices. Furthermore, the high thermal velocity—greater than 2 × 10⁷ cm s⁻¹—ensures that indium selenides can handle high-speed operations without significant energy loss.
Another advantage of these materials is their thickness-tunable bandgaps, ranging from 0.97 eV to 2.5 eV. This tunability allows for the design of energy-efficient devices that can operate across a wide spectrum of applications, from low-power electronics to high-performance photodetectors. The ability to tune the bandgap also facilitates the creation of devices with optimal performance characteristics tailored to specific needs, potentially leading to advances in ultrafast photonics and optoelectronics.
In addition to their electronic properties, indium selenides possess unique phase-dependent ferroelectric properties, enabling them to function as both logic devices and non-volatile memory elements within a single material system. This dual capability is essential for next-generation computing architectures that require efficient data storage, retrieval, and processing without the auxiliary circuitry typically associated with traditional semiconductor materials. The ability to integrate these functions into a single chip could significantly reduce manufacturing complexities and enhance overall device performance.
Recent advancements in ballistic transport in InSe transistors have laid the groundwork for next-generation computing devices. Ballistic transport refers to the regime where carriers move through the material without being scattered by defects or phonons, resulting in a significant improvement in device performance. Researchers have been able to demonstrate such ballistic transport in InSe transistors, highlighting their potential to outperform silicon-based devices in terms of speed and energy efficiency.
The development of tunnel field-effect transistors (TFETs) based on indium selenides marks another breakthrough in low-power electronics. TFETs leverage the unique band structure of indium selenides to achieve steep subthreshold slopes, which can enable lower operating voltages and thereby reduce power consumption. This is especially beneficial in modern computing applications where power efficiency and thermal management are paramount for sustaining high performance over extended periods.
In addition to their electronic properties, indium selenides also show promise in ferroelectric device applications. The exploitation of the ferroelectric characteristics of In₂Se₃ paves the way for innovative non-volatile memory solutions that can function alongside traditional logic devices. These ferroelectric memory elements can store data by inducing polarization within the material, offering advantages such as low power consumption and faster read/write times compared to conventional memory technologies.
However, challenges in the fabrication and processing of indium selenides remain a significant obstacle to their widespread adoption. Addressing these challenges is critical to translate their theoretical advantages into commercially viable solutions. Researchers are actively investigating scalable synthesis methods that can produce high-quality samples of indium selenides, which are essential for developing reliable electronic components.
Phase control is another key challenge when working with indium selenides. The ability to manipulate the phase states of these materials—given their complex phase diagrams—is critical for optimizing device performance. This includes transitioning between different structural phases, which can dramatically affect their electronic and optical properties. Implementing techniques for stabilized phase control will be vital for fostering the consistent performance of devices based on these materials.
Oxidation is also a significant concern that can impact the stability and performance of indium selenide devices. The exposure of these materials to ambient conditions may lead to undesirable oxidation, resulting in degradation of their electro-optical properties. Innovative strategies for oxidation prevention and encapsulation will be necessary to enhance the lifespan and reliability of indium selenide-based devices, particularly in real-world applications where environmental exposure is unavoidable.
Ultimately, bridging fundamental materials science with practical device engineering offers a roadmap for utilizing the exceptional properties of indium selenides in developing commercial low-power computing technologies. By focusing research efforts on the synthesis methods, phase stability, and oxidation prevention, scientists can overcome existing barriers and unlock the potential of indium selenides as alternatives to silicon-based technology.
The vision of integrating indium selenides into next-generation computing architectures entails the development of innovative devices capable of meeting the demands of modern electronics. As researchers continue to explore the capabilities of these materials, they pave the way for advanced applications that could reshape computing paradigms. The journey toward realizing indium selenides as a cornerstone of future electronics promises not only enhanced performance but also the evolution of how computing devices are conceived and utilized.
The endeavor to harness indium selenides for electronic applications is underpinned by a commitment to sustainable and efficient technology. As the industry faces mounting pressure to reduce energy consumption, the transition to low-power materials like indium selenides could represent a pivotal shift in electronic design and manufacturing. By prioritizing their adoption, we can ensure that next-generation devices are not only high-performing but also environmentally conscious, setting new standards for tech innovation in the years to come.
In summary, van der Waals indium selenides hold enormous promise for the future of low-power computing, standing at the intersection of material science and electronic engineering. Their unmatched electronic properties, combined with their unique functionalities, herald a new era of device possibilities that could ultimately challenge and surpass the longstanding dominance of silicon in the microelectronics sector.
Subject of Research: Indium Selenides for Low-Power Electronics
Article Title: Indium selenides for next-generation low-power computing devices
Article References:
Song, S., Altvater, M., Lee, W. et al. Indium selenides for next-generation low-power computing devices.
Nat Rev Electr Eng (2026). https://doi.org/10.1038/s44287-025-00251-w
Image Credits: AI Generated
DOI: 10.1038/s44287-025-00251-w
Keywords: Indium Selenides, Low-Power Electronics, Semiconductor Technology, Ballistic Transport, Ferroelectric Devices
