One of the remarkable features of indium selenides is their exceptional electron mobility, which can exceed 1,000 cm² V⁻¹ s⁻¹. This high mobility enables faster charge transport, crucial for the operation of ultra-scaled transistors needed in modern computing applications. As the demand for rapid processing speeds increases, enabling technologies that can deliver higher mobility will play a critical role in enhancing the performance of electronic devices. Furthermore, the high thermal velocity—greater than 2 × 10⁷ cm s⁻¹—ensures that indium selenides can handle high-speed operations without significant energy loss.

Another advantage of these materials is their thickness-tunable bandgaps, ranging from 0.97 eV to 2.5 eV. This tunability allows for the design of energy-efficient devices that can operate across a wide spectrum of applications, from low-power electronics to high-performance photodetectors. The ability to tune the bandgap also facilitates the creation of devices with optimal performance characteristics tailored to specific needs, potentially leading to advances in ultrafast photonics and optoelectronics.

In addition to their electronic properties, indium selenides possess unique phase-dependent ferroelectric properties, enabling them to function as both logic devices and non-volatile memory elements within a single material system. This dual capability is essential for next-generation computing architectures that require efficient data storage, retrieval, and processing without the auxiliary circuitry typically associated with traditional semiconductor materials. The ability to integrate these functions into a single chip could significantly reduce manufacturing complexities and enhance overall device performance.

Recent advancements in ballistic transport in InSe transistors have laid the groundwork for next-generation computing devices. Ballistic transport refers to the regime where carriers move through the material without being scattered by defects or phonons, resulting in a significant improvement in device performance. Researchers have been able to demonstrate such ballistic transport in InSe transistors, highlighting their potential to outperform silicon-based devices in terms of speed and energy efficiency.

The development of tunnel field-effect transistors (TFETs) based on indium selenides marks another breakthrough in low-power electronics. TFETs leverage the unique band structure of indium selenides to achieve steep subthreshold slopes, which can enable lower operating voltages and thereby reduce power consumption. This is especially beneficial in modern computing applications where power efficiency and thermal management are paramount for sustaining high performance over extended periods.

In addition to their electronic properties, indium selenides also show promise in ferroelectric device applications. The exploitation of the ferroelectric characteristics of In₂Se₃ paves the way for innovative non-volatile memory solutions that can function alongside traditional logic devices. These ferroelectric memory elements can store data by inducing polarization within the material, offering advantages such as low power consumption and faster read/write times compared to conventional memory technologies.

However, challenges in the fabrication and processing of indium selenides remain a significant obstacle to their widespread adoption. Addressing these challenges is critical to translate their theoretical advantages into commercially viable solutions. Researchers are actively investigating scalable synthesis methods that can produce high-quality samples of indium selenides, which are essential for developing reliable electronic components.

Phase control is another key challenge when working with indium selenides. The ability to manipulate the phase states of these materials—given their complex phase diagrams—is critical for optimizing device performance. This includes transitioning between different structural phases, which can dramatically affect their electronic and optical properties. Implementing techniques for stabilized phase control will be vital for fostering the consistent performance of devices based on these materials.

Oxidation is also a significant concern that can impact the stability and performance of indium selenide devices. The exposure of these materials to ambient conditions may lead to undesirable oxidation, resulting in degradation of their electro-optical properties. Innovative strategies for oxidation prevention and encapsulation will be necessary to enhance the lifespan and reliability of indium selenide-based devices, particularly in real-world applications where environmental exposure is unavoidable.

Ultimately, bridging fundamental materials science with practical device engineering offers a roadmap for utilizing the exceptional properties of indium selenides in developing commercial low-power computing technologies. By focusing research efforts on the synthesis methods, phase stability, and oxidation prevention, scientists can overcome existing barriers and unlock the potential of indium selenides as alternatives to silicon-based technology.

The vision of integrating indium selenides into next-generation computing architectures entails the development of innovative devices capable of meeting the demands of modern electronics. As researchers continue to explore the capabilities of these materials, they pave the way for advanced applications that could reshape computing paradigms. The journey toward realizing indium selenides as a cornerstone of future electronics promises not only enhanced performance but also the evolution of how computing devices are conceived and utilized.

The endeavor to harness indium selenides for electronic applications is underpinned by a commitment to sustainable and efficient technology. As the industry faces mounting pressure to reduce energy consumption, the transition to low-power materials like indium selenides could represent a pivotal shift in electronic design and manufacturing. By prioritizing their adoption, we can ensure that next-generation devices are not only high-performing but also environmentally conscious, setting new standards for tech innovation in the years to come.

In summary, van der Waals indium selenides hold enormous promise for the future of low-power computing, standing at the intersection of material science and electronic engineering. Their unmatched electronic properties, combined with their unique functionalities, herald a new era of device possibilities that could ultimately challenge and surpass the longstanding dominance of silicon in the microelectronics sector.

Subject of Research: Indium Selenides for Low-Power Electronics

Article Title: Indium selenides for next-generation low-power computing devices

Article References:

Song, S., Altvater, M., Lee, W. et al. Indium selenides for next-generation low-power computing devices.
Nat Rev Electr Eng (2026). https://doi.org/10.1038/s44287-025-00251-w

Image Credits: AI Generated

DOI: 10.1038/s44287-025-00251-w

Keywords: Indium Selenides, Low-Power Electronics, Semiconductor Technology, Ballistic Transport, Ferroelectric Devices

Two-dimensional materials, typified by their atomic-scale thickness and exceptional electronic characteristics, have captivated scientific interest due to their tunable bandgaps and superior charge carrier mobilities. This multidimensional tunability enables bespoke electronic and optical properties unattainable in conventional bulk materials. Graphene, molybdenum disulfide (MoS₂), and MXenes exemplify this class of materials, each offering distinct advantages that address the critical loss mechanisms in conventional solar cells. Their ability to facilitate rapid charge transport and minimize recombination events constitutes a fundamental shift in photovoltaic device engineering, targeting performance enhancements beyond conventional limitations.

A central aspect of this research lies in exploiting 2D materials for interface engineering within solar cells. These materials serve as electron and hole transport layers (ETLs and HTLs), as well as surface passivation agents that strategically align energy levels between active layers and electrodes. This alignment is crucial in perovskite, organic, and dye-sensitized solar cells, where interfacial imperfections often precipitate charge recombination and performance degradation. Through the introduction of 2D layers, the undesirable trap states and energetic mismatches are substantially suppressed, resulting in improved charge extraction efficiency and prolonged device lifetimes.

Beyond electronic advantages, the inherent chemical stability and mechanical flexibility of 2D materials open pathways toward the fabrication of lightweight, bendable photovoltaic devices. Such characteristics are particularly promising for emerging applications in wearable electronics and portable power generators, where traditional rigid silicon panels are impractical. The fusion of mechanical resilience and electronic optimization encapsulates a new era of photovoltaics geared towards ubiquitous, integrated energy harvesting solutions.

This review meticulously categorizes the diverse family of 2D materials, encompassing graphene, transition metal dichalcogenides (TMDCs) like MoS₂ and WS₂, black phosphorus, MXenes, and elemental 2D sheets such as silicene and stanene. Each material’s unique electronic structure and surface chemistry afford tailored functionalities within photovoltaic cells, from serving as transparent conductive electrodes to acting as catalytic counter electrodes in dye-sensitized solar cells. Such versatility underscores the pivotal role of material selection in optimizing photovoltaic performance for specific device configurations.

Architectural innovation in solar cells benefits significantly from the integration of 2D materials. The study outlines their impact across planar heterojunctions, bulk heterojunctions, and nanocomposite solar cell designs. These architectures harness the 2D materials’ ability to enhance light absorption, facilitate efficient exciton dissociation, and streamline charge collection. By engineering nanoscale interfaces and heterostructures, researchers can finely tune device properties, resulting in marked improvements in power conversion efficiencies and operational stability.

Scaling laboratory breakthroughs to industrial relevance remains a critical challenge. The review highlights advances in scalable synthesis techniques such as chemical vapor deposition (CVD), liquid-phase exfoliation, and roll-to-roll transfer printing. These methods are pivotal for producing high-quality 2D materials over large areas with reproducible properties, enabling their integration into commercially viable solar modules. Addressing synthesis scalability is essential to fulfill the promise of 2D materials in terawatt-scale photovoltaic deployment.

In the realm of perovskite solar cells, 2D materials have been shown to passivate defects through mechanisms like lead-sulfur (Pb–S) bonding, promoting epitaxial growth and creating effective barriers against moisture and ion migration. Such modifications have propelled perovskite devices to achieve power conversion efficiencies exceeding 26%, alongside substantially enhanced operational stability surpassing 1,000 hours. These advancements hold transformative potential for establishing perovskite photovoltaics as a cornerstone technology.

Organic solar cells benefit similarly from employing 2D transition metal dichalcogenides such as WS₂ and layered compounds like ZrSe₂ as electron and hole transport layers. The work-function tuning ability of these materials reduces charge recombination losses and contributes to mechanical durability, enabling efficiencies above 17% and sustaining performance over 1,000 bending cycles. This intersection of efficiency and flexibility aligns perfectly with demands for wearable and deformable solar devices.

Dye-sensitized solar cells (DSSCs), traditionally reliant on platinum counter electrodes, are witnessing a paradigm shift facilitated by 2D material-based alternatives. Pt-free counter electrodes using compounds such as WSe₂ combined with zinc or MoP/MXene composites exhibit superior electrocatalytic activity toward triiodide (I₃⁻) reduction, reaching efficiencies surpassing 10%. These innovations reduce reliance on precious metals and offer cost-effective, sustainable pathways for DSSC commercialization.

Despite these promising strides, significant challenges must be addressed to fully harness the capabilities of 2D materials in photovoltaics. The atomic thickness of these materials inherently limits light absorption, necessitating innovative strategies to augment photon harvesting. Moreover, their susceptibility to structural defects and environmental degradation remains an obstacle to long-term device reliability. The roadmap forward includes leveraging machine learning for accelerated material discovery, designing multifunctional heterostructures that synergize complementary properties, and subjecting devices to rigorous operational lifetimes exceeding 10,000 hours to validate stability.

The comprehensive review envisions a future where 2D materials are seamlessly integrated into photovoltaic technologies, driving efficiencies beyond 28% and fostering commercial viability at scale by the year 2030. Achieving this vision mandates interdisciplinary collaboration among materials scientists, chemists, physicists, and engineers, catalyzing innovation that transcends current photovoltaic paradigms. By charting this course, the research not only illuminates the transformative role of 2D materials but also galvanizes the global scientific community towards a sustainable, solar-powered future.

Subject of Research:
Article Title: Emerging Role of 2D Materials in Photovoltaics: Efficiency Enhancement and Future Perspectives
News Publication Date:
Web References: http://dx.doi.org/10.1007/s40820-025-01869-z
References:
Image Credits: Ghulam Dastgeer, Muhammad Wajid Zulfiqar, Sobia Nisar, Rimsha Zulfiqar, Muhammad Imran, Swagata Panchanan, Subhajit Dutta, Kamran Akbar, Alberto Vomiero, Zhiming Wang
Keywords: Photovoltaics, 2D Materials, Graphene, MoS₂, MXenes, Perovskite Solar Cells, Organic Solar Cells, Dye-Sensitized Solar Cells, Electron Transport Layers, Hole Transport Layers, Flexible Solar Cells