SiC is unique in its ability to withstand significantly higher voltages, temperatures, and radiation levels compared to traditional silicon. For instance, researchers at NASA’s Glenn Research Center have been investigating SiC’s viability as a high-performance semiconductor for several decades. Their groundbreaking work has culminated in the production of SiC circuits that can withstand temperatures of up to 930 degrees Fahrenheit for extended durations, demonstrating its capabilities in extreme environments such as space exploration, particularly for missions targeted at the surface of Venus.

The project’s focus on scaling NASA’s existing technology and processes to larger wafer sizes indicates a clear intention to increase the accessibility and usability of SiC chips for a wider array of applications. As the need for advanced electronics capable of functioning in high-temperature environments becomes increasingly essential across multiple industries, collaborative efforts involving major players such as GE Aerospace Research, Wolfspeed, and Ozark Integrated Circuits will be pivotal in achieving these goals.

A core part of the project is the enhancement of SiC’s applications in aerospace. The work aims to develop innovative electronics and sensors that could improve the reliability and efficiency of aircraft engines. Notably, the project will demonstrate a packaged actuator designed for aerospace applications. These actuators are critical for control systems, converting electrical signals into mechanical motion, thereby enhancing the overall functionality of aerospace technologies.

Through the successful scaling of production processes and integration methods, the project aims to lead to significant advancements in semiconductor technology, particularly within the Department of Defense’s engine platforms. The collaborative effort will enhance sensor and actuator functionalities, making them more resilient and capable of operating under extreme conditions that current silicon electronics cannot withstand. This evolution in semiconductor technology could have far-reaching implications, including the advancement of hypersonic aircraft systems that operate at unprecedented temperatures.

In partnership with industry experts, such as Ozark Integrated Circuits, the project will focus on refining packaging and integration processes. Ozark IC’s previous work with NASA and GE Aerospace has laid a foundation for the successful transition of SiC technology into practical applications. Their expertise, combined with NASA’s and GE Aerospace’s pioneering efforts in semiconductor research, positions the project to create a robust framework for the commercialization of SiC technology.

A central goal of the initiative is to ensure that the technology developed is not only scientifically advanced but also readily implementable in commercial settings. As part of this effort, the University of Michigan’s engineering researchers will work to establish a standardized process development kit and transistor models that will provide the necessary tools for integrated circuit designers. This accessibility is critical in democratizing SiC technology, enabling wider adoption across different sectors.

By creating libraries of commonly used circuit blocks, the researchers aim to streamline the design process, thus reducing the learning curve for new users. Enhanced design tools, including open electronic design automation software, will facilitate the integration of SiC technology into various applications, making it easier for engineers to develop innovative products. This initiative not only promotes innovation but also encourages collaboration among diverse stakeholders involved in the development of next-generation electronics.

As the project progresses, the Michigan Engineering team will rigorously test the devices designed by NASA and GE Aerospace, while also ensuring that the integration processes developed by Ozark IC meet industry standards. This collaborative approach will lead to the standardization of various components, thereby ensuring that the resultant technology is reliable and efficient.

In addition to the engineering challenges, the initiative reflects a critical need for domestic production of advanced semiconductors. The statement made by Becky Peterson, the principal investigator of the project, underscores the necessity for advanced materials that can handle challenging environments without compromising performance. This focus on domestic production aligns with broader goals of technological independence and innovation within the United States.

In the context of the Microelectronics Commons program established by the CHIPS Act, this project stands as a testament to the commitment of universities, government, and industry partners to elevate the country’s status in microelectronics. By collaborating to push the frontiers of semiconductor technology, the initiative aims to position the United States as a leader in the global competition for advanced electronics, thereby contributing to national security and technological advancement.

Ultimately, the undertaking at the University of Michigan embodies a confluence of expertise across academia and industry, working towards a common goal: to harness the unique properties of silicon carbide and drive forward the next generation of microelectronics. As the project unfolds and advances in SiC chip technology materialize, the implications for aerospace, defense, automotive, and renewable energy sectors will be profound, revealing new possibilities for innovation and efficiency.

Subject of Research: Development of Heat-Resistant Silicon Carbide Semiconductor Technology
Article Title: Advancing Semiconductor Technology: A Collaborative Approach to Silicon Carbide Innovations
News Publication Date: October 2023
Web References: https://docs.google.com/document/d/1GDnXwPt7LzToaYmm0-o7JzTElNeS9uHAfW8vcqhW-lw/edit?tab=t.0
References: Not Applicable
Image Credits: Not Applicable

Keywords

Silicon carbide, semiconductors, University of Michigan, NASA, aerospace technology, high-performance electronics, microelectronics, CHIPS Act, defense, renewable energy, engine reliability, actuator technology, collaborative research.

SiC power semiconductors are gaining traction in various applications due to their exceptional performance characteristics. Unlike traditional silicon (Si) semiconductors, SiC devices are capable of withstanding much higher voltages and temperatures, making them especially valuable in applications where efficiency and performance are paramount. While silicon has traditionally dominated the semiconductor market, the superior attributes of SiC, including their ability to operate in environments with extreme conditions, are creating a paradigm shift in the industry. These materials have the potential to revolutionize sectors such as aerospace, automotive, and energy production.

Fundamentally, power semiconductors act as the "muscles" within electrical devices, enabling control over current flow and power conversion. As the demand for increased efficiency and reliability in these applications rises, the exploration of wide bandgap (WBG) semiconductors, such as SiC and gallium nitride (GaN), has intensified. With their broader bandgap, SiC semiconductors not only outperform silicon in terms of efficiency but also deliver significant advantages in power handling, reliability, and operational longevity—key factors for the demanding conditions of space.

However, the challenges posed by space radiation represent a significant obstacle. High-energy particles bombard electronics in space, leading to degradation of material properties and functionality over time. This phenomenon has been a considerable concern for satellites, spacecraft, and various exploration vehicles, where maintaining operational integrity is critical. Although there has been substantial research in radiation effects in the United States and Europe, Korea’s previous academic focus has been rather limited to the quantitative aspects associated with silicon-based devices.

In a pioneering effort, Dr. Seo’s research team incorporated Korea’s first high-energy space environment simulation to assess the radiation resistance of SiC power semiconductors. To create an authentic simulation of space conditions, the researchers needed to understand the unique characteristics of space radiation, primarily consisting of protons (80–90% of the particles). By utilizing high-energy protons sourced from the accelerator facility at the Korea Atomic Energy Research Institute, and in partnership with experts from Andong National University, they meticulously recreated precise radiation exposure conditions to study the effects on the semiconductors.

Throughout the experimental process, KERI’s researchers collected data on several crucial metrics, including voltage fluctuations, increases in leakage current, and lattice damage due to exposure. These factors are essential for creating precise design criteria, aimed at ensuring the long-term reliability of SiC power semiconductor devices in space applications. The outcomes of this rigorous study were commended with a publication in the prestigious journal Radiation Physics and Chemistry, which highlights the significance of their achievement within the scientific community.

Dr. Seo emphasized the importance of establishing various radiation effect parameters and simulating them effectively. According to him, such capabilities represent a vital technology within the global space industry, underscoring Korea’s commitment to advancing its capacity in aerospace technologies. He expressed optimism for the application of their research across several fields, ranging from aerospace to medical radiation equipment and even military electronics.

This research initiative aligns with KERI’s broader goals, which include undertaking comprehensive evaluations of SiC power semiconductors under severe radiation conditions. The research team’s aspirations extend beyond current capabilities as they aim to explore ultra-high energy radiation conditions exceeding 200MeV. Additionally, they are investigating the semiconductor properties of diamond, a material that offers the most favorable characteristics for high-performance applications. This exploration is facilitated through collaborations with both local entities, such as Gyeongnam Province, and international partners like the Japanese company ‘Orbray’.

The implications of these research endeavors will resonate throughout Korea’s high-value-added aerospace industry. By developing reliable SiC power semiconductors capable of thriving in extreme radiation environments, researchers are paving the way for the next generation of space exploration vehicles and systems designed to withstand the rigors of space radiation. Such advancements could help maintain the integrity of power electronics in future missions, ensuring that spacecraft and satellites operate efficiently over extended lifespans.

As Korea continues to invest in semiconductor research and innovation, the potential benefits of this work extend beyond national interests. There is a growing recognition that the advancements made here could influence global markets and international collaborations, moving towards a future where semiconductor technologies can drive breakthroughs in various sectors.

In conclusion, Dr. Jae Hwa Seo and his team at KERI are not just conducting focused research on SiC semiconductors, but are contributing to a larger narrative surrounding the essential role of advanced materials in modern civilization. Their work highlights the intricate relationship between technology and the extreme environments encountered in space, illustrating the complex challenges and solutions that researchers face in the quest for broader, more reliable applications in cutting-edge technology.

Subject of Research: Radiation Resistance of SiC Power Semiconductor Devices in Space Environments
Article Title: Degeneration mechanism of 30 MeV and 100 MeV proton irradiation effects on 1.2 kV SiC MOSFETs
News Publication Date: 1-Feb-2025
Web References: KERI Website
References: DOI link – 10.1016/j.radphyschem.2024.112378
Image Credits: Korea Electrotechnology Research Institute

Keywords

Silicon Carbide, Power Semiconductors, Space Radiation, Reliability, Technology Evaluation, High-energy Protons, Wide Bandgap Semiconductors, Aerospace Applications, Research Innovation, KERI.