The NAE Class of 2026 comprises 158 new members, including 28 international affiliates, elected for their outstanding achievements in engineering research, practice, and education. Dr. Gnade was selected for his innovative efforts to enhance the performance and application of semiconductor materials, which are crucial components in modern electronic devices. His groundbreaking work has directly influenced the development of efficient, scalable semiconductor manufacturing processes that enable the continual miniaturization and improved functionality of electronic circuits.

As director of workforce development at the North Texas Semiconductor Institute, Dr. Gnade plays a crucial role in shaping the future of the semiconductor industry by fostering educational initiatives that prepare students for careers in advanced manufacturing. His leadership is instrumental in bridging the gap between academic research and industry demands, ensuring a robust pipeline of skilled engineers equipped to tackle the complex challenges in semiconductor technology innovation and production infrastructures.

Dr. Gnade’s contributions extend beyond academia into pivotal positions in industry and public service, notably including Texas Instruments and the Defense Advanced Research Projects Agency (DARPA). His technical expertise encompasses the development of novel materials with tailored electronic and optical properties, the integration of compound semiconductors onto traditional silicon platforms, and the optimization of device architectures for enhanced flexibility and performance in emerging consumer electronics, medical instruments, and communication technologies.

His election to the NAE brings significant prestige to UT Dallas, highlighting the university’s robust capabilities in materials science, electrical engineering, and semiconductor research. UT Dallas President Prabhas V. Moghe noted that Dr. Gnade’s achievements not only elevate the institution’s research profile but also spotlight the university’s commitment to leadership in the rapidly evolving field of flexible electronics—a domain that integrates mechanical flexibility with high-performance electronic functionalities for next-generation wearable devices and adaptive systems.

Dr. Joseph Pancrazio, vice president for research and innovation at UT Dallas, emphasized the impact of Dr. Gnade’s visionary leadership in flexible electronics. This subspecialty of electrical engineering amalgamates insights from materials science, microfabrication techniques, and circuit design, ultimately fostering innovative electronic devices that blend durability with new form factors. Gnade’s work drives progress in microelectronics by overcoming traditional limitations of rigid structures and enabling electronics that deform without sacrificing performance.

Over his career, Dr. Gnade has held numerous leadership roles including vice president for research at UT Dallas and executive director of the Hart Center for Engineering Leadership at Southern Methodist University, where he spearheaded initiatives integrating engineering innovation with leadership development. At UT Dallas, his efforts facilitate multidisciplinary collaborations that accelerate advancements in semiconductor materials, device physics, and integrated circuit technologies, key enablers of the electronics revolution shaping the digital age.

The North Texas Semiconductor Institute, under Dr. Gnade’s stewardship, has become a nexus for semiconductor workforce development and research innovation. The institute focuses on educating high school and college students about critical semiconductor industry roles, promoting cutting-edge manufacturing skills as well as advanced technical knowledge essential to maintaining North Texas’s status as a semiconductor industry hub. This strategic educational investment supports vital sectors, including consumer electronics, automotive technology, and national security systems dependent on semiconductor reliability and innovation.

Dr. Gnade’s technical accomplishments include pioneering research on flexible thin-film transistors, organic semiconductors, and hybrid material systems that expand the capabilities of traditional silicon-based devices. His work addresses fundamental challenges related to charge transport, interface engineering, and thermal management in micro- and nano-electronic devices. These advances enable higher device efficiency, prolonged operational lifetimes, and compatibility with non-traditional substrates such as plastics, contributing to the rapid emergence of wearable and implantable electronics.

His journey began with a bachelor’s degree in chemistry from Saint Louis University and a Ph.D. in nuclear chemistry from the Georgia Institute of Technology—an academic foundation that uniquely equipped him to bridge fundamental chemistry principles with applied materials science. Dr. Gnade’s interdisciplinary approach has been essential in pushing the boundaries of semiconductor technology, where atomic-level control over material properties directly translates into profound enhancements in device performance and manufacturability.

Additionally, Dr. Gnade is a fellow of several prestigious professional organizations including the American Physical Society, the Institute of Electrical and Electronics Engineers (IEEE), and the National Academy of Inventors. These accolades reflect his broad influence across multiple facets of science and engineering, from fundamental research to applied innovation, and his commitment to nurturing the next generation of engineers and scientists in the semiconductor field.

The National Academy of Engineering’s recognition of Dr. Gnade aligns him with a distinguished cohort of UT Dallas members who have made seminal contributions to engineering. This group includes pioneers such as Dr. Ronald A. Rohrer, known for computer-aided design simulation strategies, and Dr. Larry J. Hornbeck, inventor of the Digital Micromirror Device. Together, these thought leaders highlight the university’s tradition of excellence in semiconductor research, microelectronics, and engineering education—a tradition that Dr. Gnade continues to advance with visionary expertise.

In summary, Dr. Bruce Gnade’s election to the National Academy of Engineering is a testament to his visionary leadership and groundbreaking advancements in electronic materials and semiconductor device technologies. His work not only propels scientific and technological innovation but also shapes the educational pathways and industry partnerships critical for sustaining U.S. competitiveness in semiconductor manufacturing and electronic device innovation. As flexible electronics continue to transform daily life through wearable, portable, and interconnected devices, Dr. Gnade’s legacy firmly anchors UT Dallas at the forefront of this dynamic field.

Subject of Research: Electronic materials and semiconductor device technologies, flexible electronics, semiconductor manufacturing
Article Title: Dr. Bruce Gnade Elected to National Academy of Engineering for Semiconductor Innovations
News Publication Date: February 10, 2026
Web References:

• https://chairs.utdallas.edu/biographies/dr-bruce-e-gnade/
• https://ntxsi.utdallas.edu/
• https://mse.utdallas.edu/
  Image Credits: The University of Texas at Dallas
  Keywords: Scientific community, Engineering, Electrical engineering, Bioengineering, Electronics, Semiconductors, Electronic circuits, Electronic devices, Microelectronics, Industrial sectors, Manufacturing

Unlike prior studies where charge noise was identified as the dominant factor limiting qubit coherence and operation fidelity, this new work highlights a different pathway to performance enhancement. Here, noise stemming from nuclear spins within the silicon lattice assumes a critical role. By employing isotopically enriched silicon with a reduced content of the nuclear spin-active isotope ^29Si, the team managed to achieve qubit fidelities exceeding 99%. This level of isotopic purity, currently at 400 ppm of ^29Si in their devices, paves the way for further improvements, given that academic prototypes have already demonstrated enrichment to below 50 ppm. This significant reduction in nuclear spin noise correlates with extended coherence times and improved qubit stability, a vital condition for practical quantum computation.

The industrial realization of such qubit devices required meticulous engineering, combining precise device fabrication with sophisticated calibration protocols. The researchers report that while the current calibration and tuning procedures remain labor-intensive and manually driven, these are essential to reach the demonstrated exceptional qubit control. The development of automated methods for calibration and characterization at scale remains a crucial future step. Once mature, these methodologies will enable mass calibration campaigns necessary for deploying large arrays of spin qubits efficiently and reproducibly, a fundamental requirement for building fault-tolerant quantum processors.

A notable aspect of this study is the comprehensive noise analysis that establishes a strategic framework to address qubit fidelity constraints. While the present qubit performance already surpasses many previously reported results, the team emphasizes reducing overhead for fault-tolerant quantum computing by targeting fidelities above 99.9%. Achieving such ultra-high fidelities across all quantum operations will dramatically ease the resource requirements for quantum error correction, thus bringing scalable and practical quantum architectures closer to reality.

The integration of spin qubits within a silicon–metal–oxide–semiconductor (SiMOS) platform furnishes unique advantages, primarily leveraging decades of industrial-scale CMOS (complementary metal-oxide semiconductor) technology. Nonetheless, fabricating devices with extremely small gate pitches and interfaces exhibiting minimal charge noise has historically presented formidable challenges. By overcoming these technical barriers, the researchers have successfully produced silicon spin-qubit unit cells adhering to industrial fabrication standards, potentially enabling seamless integration of quantum circuits onto conventional semiconductor chips.

Looking toward future scalability, the team underscores the importance of studying qubit behaviors under operational conditions that reflect large-scale systems more accurately. These include the application of global microwave control fields, which simplify control architecture across extensive qubit arrays, and operation at elevated temperatures that accommodate the heat dissipation of co-integrated control electronics, such as CMOS control chips operating at millikelvin regimes. Addressing these factors is critical to designing quantum processors that balance performance, control complexity, and manufacturability.

Beyond the immediate performance metrics, this research lays foundational work for designing quantum error correction strategies uniquely suited to spin qubit technology. Tailoring error correction codes to the specific noise profiles and error rates of silicon spin qubits will optimize fault tolerance, advancing the practical realization of quantum advantage. Still, these error correction schemes require comprehensive characterization of qubit operation fidelity in increasingly complex environments and device architectures.

The consistent demonstration of high-quality qubit operation, achieved through advanced fabrication under 300-mm foundry conditions, marks a proof of principle with substantial implications for industrial quantum technology development. It signals a transition from isolated laboratory demonstrations toward the integration of quantum devices within existing semiconductor industry infrastructures. This fusion holds promise for accelerating the timeline toward commercial quantum computers built upon the silicon spin-qubit platform.

Moreover, the study highlights the critical role of collaborative efforts between academia and industry. The convergence of industrial-scale fabrication processes with scientific insights into qubit physics and control methodology embodies a multidisciplinary approach essential for overcoming current technical and practical challenges. Such partnerships will be vital for pushing the boundaries of quantum processor performance while maintaining scalability and cost-effectiveness.

In synthesizing the achievements and future outlook, the researchers advocate for continued refinement of both materials and control techniques. The route toward fault-tolerant quantum computing will demand not only ultra-pure silicon and optimized device geometries but also enhanced understanding of electron quantum behavior in complex semiconductor environments. Advanced modeling and real-time measurement capabilities during fabrication will underpin these developments, creating feedback loops that improve device quality and uniformity.

Ultimately, these results present a compelling narrative: the progression of silicon spin qubits from an experimental curiosity to a viable industrial quantum technology is underway. The convergence of high-fidelity quantum control, industrial fabrication compatibility, and scalable architectures augurs a new era in quantum hardware research and development. This trajectory promises to transform quantum computation from a theoretical framework into a pervasive technological platform that harnesses the immense processing power intrinsic to quantum mechanics.

Subject of Research: Silicon spin qubits fabricated in 300-mm industrial semiconductor processes demonstrating high-fidelity quantum control and prospects for scalable quantum computing.

Article Title: Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity.

Article References:
Steinacker, P., Dumoulin Stuyck, N., Lim, W.H. et al. Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity. Nature (2025). https://doi.org/10.1038/s41586-025-09531-9

Image Credits: AI Generated

Auburn, Alabama — In an extraordinary recognition of scientific excellence and decades of dedicated research, Professor Edward Thomas Jr., a leading figure in plasma physics at Auburn University, has been awarded the eminent Star Dust Award by the International Dusty Plasma Community. The honor was conferred during the 10th International Conference on the Physics of Dusty Plasmas (ICPD10), which gathered top scientists from around the globe at Eindhoven University of Technology in the Netherlands, underscoring Dr. Thomas’s far-reaching influence within the physics community.

The Star Dust Award celebrates Professor Thomas’s remarkable thirty-year tenure of innovation and leadership in the specialized field of dusty plasma physics. Dusty plasmas refer to ionized gases that encompass micron- or nanometer-sized solid particles, which drastically alter plasma behavior and lead to unique physical phenomena not observed in traditional plasmas. Such systems are not abstract curiosities; they manifest across diverse environments, from the manufacturing floors of semiconductor factories to the ethereal rings encircling Saturn, and even in the expansive realms of interstellar space.

Dr. Thomas’s career has been marked by a series of groundbreaking discoveries that have enriched the fundamental understanding of magnetized dusty plasmas. These plasmas feature charged dust particles interacting in the presence of strong magnetic fields, offering a complex array of collective behaviors with critical implications for both applied and theoretical plasma physics. Through pioneering experimental techniques, particularly the innovative application of Particle Image Velocimetry (PIV), Thomas has enabled unprecedented visualization and quantification of particle dynamics within these intricate systems.

At the heart of Auburn University’s premier dusty plasma investigations stands the Magnetized Dusty Plasma Experiment (MDPX)—an advanced experimental facility overseen and often guided by Dr. Thomas’s vision. Funded primarily by the National Science Foundation (NSF), the MDPX is tailored to probe the subtle interplay of magnetic forces and dust-laden plasmas at the cutting edge of physics research. The apparatus allows researchers to replicate astrophysical and industrial plasma conditions under controlled laboratory environments, opening new windows into phenomena such as plasma crystallization, wave propagation, and turbulence in dusty plasmas.

The MDPX is an integral component of Auburn’s Magnetized Plasma Research Laboratory (MPRL), a flagship research entity supported by both the DOE (U.S. Department of Energy) and NSF. Under Dr. Thomas’s stewardship, the MPRL has emerged as a globally recognized hub for magnetized plasma studies, fostering collaborations that span continents. The synergy between experimental development and theoretical modeling within this lab has propelled the dusty plasma research frontier forward, advancing understanding applicable not only to space sciences but also to emerging technologies in plasma processing and environmental sciences.

Professor Thomas’s commitment extends beyond research innovation to the cultivation of future scientists. Over the course of his career, he has mentored more than fifty students at the undergraduate and graduate levels, guiding over a dozen of them through the rigorous process of earning doctoral degrees in plasma physics. This emphasis on education and mentorship has helped create a vibrant community of researchers equipped to tackle the challenges of plasma science in various domains. Through continuous support from federal programs—including NSF’s CAREER, Major Research Instrumentation (MRI), and EPSCoR initiatives—Thomas has secured vital funding that sustains both his research and the training of emerging experts.

The dusty plasmas that Dr. Thomas investigates reveal astonishing complexities. Unlike idealized plasmas composed solely of ions and electrons, dusty plasmas introduce charged particulates that interact via electromagnetic forces, gravity, and collisions, resulting in highly intricate microphysical behavior. For example, dust grains can self-organize into crystalline structures even under low-temperature plasma conditions, a phenomenon known as plasma crystallization or “plasma crystals.” These structures provide a terrestrial analogue for studying fundamental processes that occur naturally in planetary rings and cometary tails, bridging laboratory physics with cosmic observations.

Magnetic fields dramatically influence dusty plasmas by imparting anisotropies and guiding charged particle motion along field lines, which profoundly alters wave propagation patterns and the stability of plasma structures. Through the sophisticated experiments led by Dr. Thomas at MDPX, insights have been gained into how magnetic confinement can regulate dust particle transport and aggregation. These findings hold significance not only for astrophysical modeling—where magnetized dusty plasmas are abundant—but also for optimizing plasma-based manufacturing techniques where dust contamination must be controlled.

The role of innovative diagnostics like Particle Image Velocimetry in Dr. Thomas’s work cannot be overstated. PIV techniques enable the tracking of microscopic dust grain velocities and trajectories by analyzing the motion of seed particles illuminated with laser sheets. This allows highly resolved, quantitative measurements of flow fields and wave dynamics at spatial and temporal scales previously inaccessible in dusty plasma research. Such data provide critical feedback for validating numerical simulations and refining theoretical descriptions of strongly coupled plasma systems.

Dr. Thomas expresses profound gratitude for the recognition, crediting his students, colleagues, and collaborative networks that have shaped three decades of productive inquiry. “This award celebrates not just past achievements but a future of continued exploration,” he remarked, highlighting the collective nature of scientific progress. His acknowledgment reflects an inclusive vision of research where mentorship, teamwork, and institutional backing converge to produce new knowledge.

Auburn University and its College of Sciences and Mathematics have been instrumental in fostering Dr. Thomas’s mission, offering infrastructural and financial resources that underpin sustained advancement in dusty plasma physics. The university’s support exemplifies how academic institutions can catalyze frontier research that links fundamental physics to technological and societal impact. In turn, Dr. Thomas’s work enhances Auburn’s stature within the global physics community as a leader in magnetized plasma studies.

Ultimately, the recognition of Professor Edward Thomas Jr. by the International Dusty Plasma Community through the Star Dust Award celebrates not only an individual’s lifetime of extraordinary contributions but also the vibrant field of dusty plasma physics itself. As investigations continue, the understanding of these complex ionized particle systems promises new insights into both the universe’s grand phenomena and the practical challenges of modern technology. Those interested in exploring the frontier of dusty plasma research can learn more by visiting Auburn University’s Physics Department, where the legacy and future of this captivating science are actively unfolding.

Subject of Research: Dusty plasma physics, magnetized dusty plasmas, experimental plasma diagnostics

Article Title: Auburn Physicist Edward Thomas Jr. Honored with Prestigious Star Dust Award for Pioneering Work in Dusty Plasma Physics

News Publication Date: Information not provided

Web References: Information not provided

References: Information not provided

Image Credits: Information not provided

Keywords

Plasma physics, magnetic confinement, dusty plasma, magnetized dusty plasmas, Particle Image Velocimetry, Magnetized Dusty Plasma Experiment, plasma crystallization, plasma diagnostics, Auburn University, International Dusty Plasma Community

Silicon spin qubits leverage the principles of quantum mechanics, utilizing the intrinsic properties of electrons to store and manipulate information. One of the outstanding features of these qubits is their extended coherence times, with recent advancements allowing them to sustain quantum states for up to 0.5 seconds. This is pivotal since coherence time is critical for executing quantum operations before decoherence occurs. Furthermore, silicon spin qubits demonstrate impressive single-qubit gate fidelities exceeding 99.95% and two-qubit gate fidelities that surpass the thresholds considered necessary for fault-tolerant quantum computation. Such metrics suggest that silicon spin qubits are on the cusp of making quantum computing a practical reality.

The foundation of silicon spin qubits lies in silicon quantum dots, often referred to as artificial atoms. These minuscule structures are capable of trapping and controlling individual electrons, providing the building blocks for defining various spin qubit configurations. Researchers are particularly focused on manipulating these electrons either through resonant techniques or through electric fields, depending on the qubit architecture employed. Single-electron quantum dots can be influenced using alternating-current magnetic fields, allowing for fine control over their quantum states. Alternatively, two-electron systems operate via exchange interactions to create intricate qubit structures, such as singlet-triplet qubits, enabling the fabrication of two-qubit gates that are essential for constructing more complex quantum circuits.

The review categorizes silicon spin qubits into two main types: gate-defined quantum dots and donor-based quantum dots. Gate-defined quantum dots utilize electric fields to confine electrons, relying on substrates like silicon or silicon/germanium heterostructures for fabrication. This technique allows for the production of qubits with tailored properties while making use of established semiconductor processes. On the other hand, donor-based quantum dots explore a different avenue, encoding qubits by introducing dopant atoms such as phosphorus into silicon. The methods of fabrication for these quantum dots include ion implantation, which integrates dopants directly into the silicon lattice, and scanning tunneling microscope lithography, offering precise control during the qubit creation process.

Despite their distinct fabrication methods, gate-defined and donor-based quantum dots share significant technological synergies. A commonality between these two approaches is the ability to enhance spin coherence times through the use of isotopically purified materials. This factor is crucial as it reduces the noise and environmental interactions that lead to decoherence. Additionally, qubit initialization and readout mechanisms can be achieved through sophisticated processes like spin-to-charge conversion, deployed in techniques such as spin-selective tunneling and the Pauli spin blockade. These advancements mark essential steps toward achieving reliable qubit operations necessary for practical quantum computing applications.

Furthermore, the implementation of robust two-qubit gates hinges on effective utilization of the exchange interaction between qubits. As researchers continue to refine these interactions, they unlock deeper capabilities for quantum information processing. This is particularly important as the ambition to scale quantum computing systems grows. A pivotal aspect of this scaling involves achieving long-distance coupling of spin qubits. By facilitating this connectivity, it becomes possible to increase the number of qubits in a quantum computing architecture, thus realizing distributed quantum computing systems.

Recent innovations in circuit quantum electrodynamics have paved new pathways for achieving coherent interactions between spin qubits via microwave photons in superconducting resonators. The demonstration of strong spin-photon coupling, especially through hybrid techniques utilizing synthetic spin-orbit interactions provided by micromagnets, has shown promise in achieving high-fidelity quantum state transfer between qubits. Such advances lay the foundation for the development of quantum multi-core processors and distributed architectures that could potentially tackle complex problems beyond the reach of classical computers.

Despite the promising outlook for silicon spin qubits, a variety of challenges remain. For those focused on gate-defined quantum dots, future research areas include integrating silicon qubits with on-chip classical control systems and innovating new two-dimensional and three-dimensional qubit array layouts. Additionally, exploring the feasibility of operating these qubits at elevated temperatures could provide avenues for enhancing robustness and practical applicability. Conversely, for donor-based quantum dots, researchers emphasize the importance of refining fabrication techniques, optimizing integration with "hot qubits", and probing alternative dopants to enhance performance.

The overarching theme of scaling up silicon spin qubits for widespread application hinges on continual improvements in qubit operational fidelity. Addressing inhomogeneities and disorder within large-scale qubit arrays poses considerable challenges, necessitating further exploration into material characteristics and fabrication processes. Optimizing qubit architecture and configuration will play a crucial role in overcoming these hurdles and advancing the transition from laboratory prototypes to functional quantum computing systems.

As this field evolves rapidly, it is evident that silicon spin qubits offer a unique blend of compatibility with existing semiconductor technology and profound quantum mechanical advantages. The insights provided in the review underscore the significant strides made and the exciting prospects ahead as researchers collectively work towards turning the vision of scalable, fault-tolerant quantum computers into a reality. This journey is undoubtedly poised to redefine computational capabilities, pushing the boundaries of what is possible in technology, finance, healthcare, and beyond.

Subject of Research: Single-Electron Spin Qubits in Silicon for Quantum Computing
Article Title: Single-Electron Spin Qubits in Silicon for Quantum Computing
News Publication Date: 2-May-2025
Web References: https://spj.science.org/journal/icomputing/
References: http://dx.doi.org/10.34133/icomputing.0115
Image Credits: Not provided.

Keywords

Quantum Computing, Silicon Spin Qubits, Quantum Dots, Gate-Defined Quantum Dots, Donor-Based Quantum Dots, Coherence Times, Fault-Tolerant Computing, Distributed Quantum Computing, Quantum Electrodynamics, Spin-Photon Coupling.