The researchers find quantum anomalous Hall insulators with absolute Chern numbers spanning |C| = 1 up to |C| = 7 near a moiré filling factor v = 1 and again around v ≈ 3. In topological band language, the Chern number counts how many chiral edge channels the system supports, and higher-|C| phases imply more intricate internal topology. Achieving such high-Chern insulating states in a tunable lattice system strengthens the case that moiré engineering can emulate—and extend—the physics usually associated with Landau levels.

Most compelling is the emergence of a fractional Chern insulator with C = 7/3 near v = 2/3. Fractional Chern insulators are the lattice analog of fractional quantum Hall phases: they host fractionally charged quasiparticles and can support anyonic exchange statistics. While many theoretical and experimental studies have focused on fractional states tied to known “fractional quantum Hall-like” sequences, this C = 7/3 state lies beyond commonly discussed patterns derived from the Jain sequence or high-Chern constructions. The result therefore points to a richer hierarchy of fractional topology in multi-Chern flat bands than previously catalogued.

The broader implication is that the system provides a route to probing fractionally charged excitations without relying on a strong magnetic field. In conventional fractional quantum Hall physics, the Landau level framework constrains both the allowed fractions and the structure of excitations. Here, the moiré flat-band setting replaces that basis, suggesting that lattice geometry and band topology can generate new excitation categories—potentially including anyons with properties distinct from their Landau-level counterparts.

By demonstrating a high-|C| fractional phase at a specific moiré filling, the study expands the experimental map of topological flat-band matter. It also motivates future measurements aimed at extracting quasiparticle charge, characterizing edge-mode structure, and testing how fractional statistics manifest in high-Chern fractional states. If such states can be reliably stabilized and controlled, moiré graphene may become an increasingly powerful platform for anyon research and topological quantum design.

Subject of Research: Fractional high-Chern insulators in twisted rhombohedral graphene moiré systems

Article Title: Fractional high-Chern insulator in twisted rhombohedral graphene.

Article References: Li, Z., Wang, W., Wang, F. et al. Fractional high-Chern insulator in twisted rhombohedral graphene. Nature (2026). https://doi.org/10.1038/s41586-026-10762-7

Image Credits: AI Generated

DOI: https://doi.org/10.1038/s41586-026-10762-7

Keywords: fractional Chern insulator; high-Chern number; quantum anomalous Hall; moiré flat bands; twisted rhombohedral graphene; anyonic excitations

Weyl semimetals have captivated intense research interest because of their unconventional topological properties, characterized by Weyl nodes—points in momentum space where conduction and valence bands touch—and their associated Fermi arc surface states, which defy classical surface state expectations. The team spearheaded an innovative approach by incorporating Rashba spin-orbit coupling into a time-reversal-symmetry-broken WSM model. This subtle addition induces nontrivial topological band structures culminating in a system characterized by a quantized Chern number of 1, a hallmark of quantum Hall states but now achieved in a 3D framework.

Deep theoretical modeling revealed the intricate band structures in both the bulk and surface states of the proposed system. The researchers demonstrated the emergence of unique boundary manifestations unlike those observed in conventional stacked 2D Chern insulators. Along one spatial direction, two distinct chiral surface states propagate unidirectionally, while along another axis, a pair of hinge states appear, their chirality decisively linked to the Fermi energy. Compellingly, these distinct topological states are interwoven by additional chiral surface states along the third spatial dimension, collectively embodying a novel 3D bulk-boundary correspondence principle.

One of the most striking findings is the anisotropic nature of electrical transport in this 3D QAHE phase. The Hall resistance does not assume a universal value but instead varies discretely depending on the current direction and precise Fermi energy placement. The resistance quantization takes values of 0, h/e², or ±h/e², revealing a rich landscape of transport regimes. These predictions were rigorously verified through Landauer-Büttiker formalism-based transport calculations, which also indicated remarkable resilience to typical disorder effects. Such robustness is critical for practical applications, as it signals the stability of the quantum state under realistic imperfections.

This multidimensional topology fundamentally distinguishes the system from mere layer stacking of 2D quantum anomalous Hall states, establishing a genuinely 3D quantum Hall insulator with complex interplay among surface and hinge modes. The implication of these findings is profound, suggesting that 3D topological phases can host exotic electronic phenomena inaccessible by conventional 2D systems, potentially enabling new paradigms in dissipationless transport and quantum computation.

The practical ramifications extend beyond academic curiosity. The ability to harness a stable 3D QAHE phase paves the way for a new class of low-power, topologically protected devices contributing to programmable electronics and in-memory computing architectures. These applications rely on the precise control of edge and surface states in 3D geometries, enabling robust, high-density, and energy-efficient information processing components well suited for the technological demands of the future.

To achieve experimental realization, the team points toward magnetically doped WSM compounds, which break time-reversal symmetry essential for the QAHE. Such materials are increasingly accessible due to advances in material synthesis and precision doping techniques. The experimental pursuit will likely focus on detecting quantized Hall resistance signatures and the distinctive anisotropic transport behaviors predicted, which serve as fingerprints of the 3D QAHE phase.

The understanding of 3D QAHE enriches the broader landscape of topological phases, exemplifying how spin-orbit coupling and magnetic order can intertwine to produce complex, emergent phenomena in quantum materials. This synergy enriches theoretical topological classification schemes and challenges experimentalists to explore emergent quasiparticles and boundary modes beyond conventional paradigms.

Moreover, this work underscores the critical importance of multidirectional chiral surface and hinge states in defining the electronic architecture of novel quantum phases. The ability to manipulate these states via Fermi energy tuning or directional current injection offers a tantalizing prospect for device-level control, paving the way for engineered topological circuits where information is encoded and transported with unprecedented fidelity.

In the broader context of condensed matter physics, this proposal marks a pivotal step in completing the Hall effect family, transitioning from 2D quantum anomalous Hall systems to fully fledged 3D analogs. Such progress not only satisfies longstanding theoretical quests but opens a new frontier in material functionalities endowed by topology, spin, and magnetic interactions.

While the theoretical promise is unequivocal, the path to experimental validation will require meticulous material design and measurement precision. Potential challenges include maintaining the delicate balance of magnetic doping, disorder management, and achieving the requisite Rashba spin-orbit coupling strength. Nonetheless, the roadmap provided by this study equips experimentalists with clear target parameters and transport signatures, accelerating the realization of these quantum states in laboratory settings.

Ultimately, the discovery of the three-dimensional quantum anomalous Hall effect in Weyl semimetals represents a transformative leap in the understanding and application of topological quantum materials. It exemplifies the power of theoretical innovation combined with deep physical insights, forging a path toward novel quantum devices that leverage the intricate dance of electrons in topologically nontrivial landscapes.

Subject of Research: Quantum anomalous Hall effect in three-dimensional Weyl semimetals

Article Title: Quantum Hall Effect Goes 3D: Scientists Unveil New Topological State in Weyl Semimetals

Web References: DOI: 10.1016/j.scib.2025.09.037

Image Credits: ©Science China Press

Keywords: Quantum anomalous Hall effect, 3D QAHE, Weyl semimetals, Rashba spin-orbit coupling, topological insulators, Chern number, chiral surface states, hinge states, anisotropic transport, Landauer-Büttiker calculations, magnetically doped materials, topological electronics

Despite the tantalizing theoretical and experimental developments, practical challenges hinder the widespread utilization of MnBi₂Te₄. The brittle nature of this material complicates the exfoliation process traditionally performed using Scotch tape, often resulting in fractured flakes too small or defective for device fabrication. Moreover, exposure to ambient conditions and fabrication residues degrade its intricate quantum states, making reproducibility a daunting task. Such obstacles have fueled the quest for more refined exfoliation and encapsulation techniques to reliably produce large, high-quality flakes that preserve their delicate topological and magnetic properties.

Addressing these critical challenges, the team from Tsinghua University in collaboration with Renmin University of China has developed an innovative wax-assisted exfoliation method for MnBi₂Te₄ crystals. This approach harnesses the thermomechanical properties of Crystalbond 509, a widely used thermoplastic adhesive, which softens at elevated temperatures and resolidifies into a robust, transparent shell upon cooling. By adhering MnBi₂Te₄ crystals onto heated softened wax, then allowing the wax to solidify, the researchers generated a rigid, protective platform. This wax substrate enabled repeated exfoliation cycles, producing large-area, atomically smooth flakes that remain intact without the common fracture issues faced in conventional methods.

The ingenuity of this wax-assisted strategy lies in its dual role as both a support and a shield. The softened wax molds intimately to the crystal surface during adhesion, maintaining crystal integrity throughout exfoliation. Once hardened, the transparent shell protects the sensitive flakes from mechanical disruption and environmental contaminants during subsequent manipulation and device assembly. This contrasts with previous auxiliary methods utilizing gold or aluminum oxide layers, which, while supportive, introduced complexity and potentially affected the underlying quantum states due to metal or oxide-induced interface effects.

Building on their prior findings demonstrating the positive influence of single-layer aluminum oxide capping on MnBi₂Te₄’s magnetic properties, the researchers extended this concept by developing dual-surface encapsulation. Both the top and bottom surfaces of the exfoliated MnBi₂Te₄ flakes were uniformly capped with AlOₓ layers, forming AlOₓ–MnBi₂Te₄–AlOₓ heterostructures. This encapsulation not only acts as an effective barrier against organic and particulate contamination during device fabrication but also enhances perpendicular magnetic anisotropy. The improved magnetic anisotropy strengthens the antiferromagnetic order intrinsic to MnBi₂Te₄, fortifying its topological states against perturbations.

Experimental devices fabricated using this wax-assisted dual-encapsulation approach delivered unprecedentedly robust quantum phenomena. In even-layered MnBi₂Te₄ devices, researchers observed a pronounced axion insulator phase characterized by a broad regime exhibiting zero Hall conductivity amid strongly insulating longitudinal resistance. This clear signature marks a significant advancement in the experimental realization of axion electrodynamics, which has implications for future topological quantum computing and novel magnetoelectric devices. Conversely, odd-layered devices displayed spectacular quantum anomalous Hall effects with nearly perfect rectangular hysteresis loops, signifying stable chiral edge state conduction and markedly enhanced coercive fields.

Notably, the quantum anomalous Hall effect in these devices exhibited further enhancement under applied in-plane magnetic fields, corroborating previously reported complex magnetic behaviors exclusive to MnBi₂Te₄. These enhanced magnetic responses suggest improved control over spin configurations and domain dynamics, offering an exciting avenue for finely tuning topological states via external fields. The robustness and reproducibility of these quantum effects underscore the transformative impact of the wax-assisted exfoliation method combined with dual AlOₓ encapsulation on experimental condensed matter research.

Beyond their immediate results, these methodological advances open new horizons for other challenging 2D materials exhibiting subtle quantum phenomena. The simplicity and effectiveness of wax-assisted exfoliation overcome several longstanding obstacles, presenting a scalable and reproducible route to fabricate large-area, high-quality flakes essential for both fundamental studies and device engineering. Moreover, the dual-surface AlOₓ encapsulation technique can be adapted to rival sensitive quantum materials where environmental vulnerability limits practical applications, such as magnetic topological insulators, superconductors, and ultrathin semiconductors.

The dual combination of improved mechanical exfoliation with superior chemical and magnetic surface protection embodies an integrated materials engineering approach crucial to realizing the full potential of emerging quantum matter. By enabling the fabrication of atomically flat, magnetically stable MnBi₂Te₄ flakes, this research lays the groundwork for next-generation quantum devices exploiting topological magnetism, quantum phase transitions, and spintronic functionalities. These devices promise unprecedented performance in low-power electronics, quantum information processing, and novel sensing technologies, driving a paradigm shift in materials-driven innovation.

This breakthrough exemplifies the vital intersection of materials science, condensed matter physics, and innovative fabrication technologies. It demonstrates how finely tuned interfaces and meticulous sample preparation can unlock hidden physical states, previously inaccessible due to technical limitations. The integration of thermoplastic wax as a temporary yet effective exfoliation medium, combined with strategic oxide encapsulation, reflects a wider trend in leveraging unconventional approaches to overcome traditional materials barriers.

Looking forward, further optimization of the wax-assisted technique, possibly integrating in situ cleaning or doping strategies, could yield even more precise control over flake quality and interfacial properties. Complementary spectroscopic and microscopy investigations will provide deeper insights into the atomistic mechanisms by which the AlOₓ layers reinforce magnetic anisotropy and protect topological order. Such understanding will pave the way for tailored heterostructures with engineered quantum phases and innovative functionalities.

Furthermore, this novel fabrication paradigm may stimulate renewed interest in exploring more exotic magnetic topological phases predicted for MnBi₂Te₄ and related compounds under various external perturbations like pressure, strain, or electric field. The availability of large, high-quality, stably encapsulated flakes significantly enhances experimental flexibility and device integration potential, accelerating knowledge discovery and technology transfer in quantum materials science.

In summary, the wax-assisted exfoliation approach developed by the Tsinghua–RUC team represents a significant leap forward in the pursuit of viable quantum devices based on MnBi₂Te₄. By combining the benefits of a low-cost, accessible supportive wax medium with high-performance dual AlOₓ encapsulation, the researchers established a versatile platform that preserves crystal integrity, enhances magnetic properties, and stabilizes topological quantum states. This study not only advances fundamental understanding but also propels quantum material fabrication toward scalable and reproducible device production, ushering in a new era of quantum-enabled technologies.

Subject of Research: Experimental study of magnetic topological insulator MnBi₂Te₄ using advanced exfoliation and encapsulation methods.

Article Title: Wax-Assisted Exfoliation Enables High-Quality MnBi₂Te₄ Devices with Enhanced Topological and Magnetic Properties

Web References: http://dx.doi.org/10.1016/j.scib.2025.08.005

References:

• Science 367, 895 (2020) – Observation of quantum anomalous Hall effect in MnBi₂Te₄
• Nat. Mater. 19, 522 (2020) – Axion insulator state in MnBi₂Te₄
• Nat. Commun. 11, 2453 (2020) – Gold-assisted exfoliation methods
• Nature 563, 94 (2018) – AlOₓ-assisted exfoliation methodologies
• Nat. Commun. 16, 1727 (2025); Nature 641, 70 (2025) – AlOₓ capping effects on MnBi₂Te₄

Image Credits: ©Science China Press

Keywords: Two-dimensional materials, magnetic topological insulators, MnBi₂Te₄, quantum anomalous Hall effect, axion insulator, exfoliation methods, thermoplastic wax, aluminum oxide encapsulation, quantum materials, magnetic anisotropy, device fabrication, condensed matter physics

A pivotal breakthrough in this arena occurred in 2013, when scientists at Tsinghua University reported the first observation of the quantum anomalous Hall effect (QAHE). This phenomenon, a cousin to the well-known quantum Hall effect, emerges in certain magnetic topological insulators without an external magnetic field and opens pathways to harness topological states for quantum computation. Since then, attention has shifted toward more intricate fractionalized variants of this effect, namely the fractional quantum anomalous Hall effect (FQAHE). Sometimes referred to as a new branch of the “quantum Hall family,” FQAHE systems bring fascinating opportunities by supporting more exotic quasiparticles central to topological quantum computation.

Among these emergent quasiparticles are the exotic Z₃ parafermions, which arise under specific conditions in FQAHE systems, particularly at certain high fractional filling factors or when interfaced with superconductors. Unlike Majorana fermions associated with Z₂ statistics, Z₃ parafermions obey Fibonacci anyonic statistics—remarkable for their ability to encode and manipulate quantum information in a way that is both robust against local disturbances and capable of universal quantum computation. Achieving such a state is the “holy grail” for topological quantum computing, promising unprecedented stability and computational power.

Recent commentary in Science Bulletin by the research group led by Hai-Zhou Lu at the Southern University of Science and Technology sheds light on this frontier. Their review spotlights state-of-the-art experimental platforms such as twisted bilayer molybdenum ditelluride (MoTe₂) and rhombohedral multilayer graphene encapsulated by hexagonal boron nitride (hBN) moiré superlattices. These materials exhibit striking signatures of FQAHE and hold promise as fertile ground for engineering universal topological quantum computers. Notably, twisted bilayer MoTe₂ showcases well-defined fractional states at filling factors like -2/3 and -3/5, while multilayer graphene systems go further, revealing a richer spectrum of fractional states including rare even-denominator fractions.

The research dissects two compelling routes to realize Z₃ parafermions leveraging these material systems. First, high-filling fractional quantum Hall states—such as filling ν = 13/5—are predicted to emulate the Read-Rezayi state, a theoretical fractional quantum Hall state long anticipated to support Z₃ parafermions and thus Fibonacci anyons. Second, inducing superconductivity in FQAHE systems may yield fractional topological superconductors with robust Z₃ parafermion edge modes. In twisted MoTe₂, for example, superconductivity can be triggered via palladium metalization, while rhombohedral multilayer graphene exhibits high-Chern-number QAHE, possibly accompanied by intrinsic superconductivity. These unique properties provide fertile platforms to engineer and manipulate parafermionic excitations.

Such advances deepen our understanding of how complex quantum phases and topological phenomena intertwine in layered two-dimensional materials. The remarkable control over filling fractions and the precise fabrication of moiré superlattices enable researchers to tailor electronic interactions delicately, fostering states that host fractionalized excitations. The hope is that this emergent control will bridge the gap between theoretical predictions and experimental realizations of universal topological quantum gates essential for scalable quantum computers.

Nevertheless, formidable challenges remain on the path to harnessing FQAHE systems for quantum information processing. Attaining and stabilizing high-filling fractional states is technically demanding, requiring ultralow temperatures, exceptional material purity, and controlled electrostatic gating. In addition, the interplay between fractionalized topological states and superconductivity must be delicately tuned to prevent unwanted decoherence or non-topological excitations that could jeopardize qubit integrity. Overcoming these hurdles demands a multi-disciplinary effort encompassing materials science, condensed matter physics, and quantum engineering.

Moreover, the precision required to probe and manipulate parafermions in these systems calls for sophisticated spectroscopy and transport measurements, alongside the development of novel device architectures. Experimental verification of Z₃ parafermion modes through unambiguous signatures—such as fractionalized conductance quantization and non-Abelian braiding statistics—remains a critical milestone. Success in this domain would mark a paradigm shift in quantum hardware development, moving from fragile, error-prone qubits to inherently protected topological units.

The ongoing exploration of FQAHE in twisted bilayer MoTe₂ and rhombohedral graphene-based moiré structures underscores the importance of moiré engineering as a versatile strategy in quantum materials research. By deliberately creating periodic potentials at the nanoscale, scientists can simulate strongly correlated electronic environments that give rise to staggering quantum phases. These synthetic lattices empower the realization of fractional quantum Hall states in zero magnetic fields, amplifying the scope of materials available for quantum computation.

Parallel theoretical work continues to map the rich phase diagrams of such systems, elucidating the conditions favorable for parafermion emergence and topological superconductivity. Models involving spin-orbit coupling, electron-electron interaction, and magnetic order converge, uncovering a complex landscape where quantum anomalies give rise to unexpected and highly desirable quantum phenomena. This synergy between theory and experiment is driving unprecedented insight into quantum topology.

Ultimately, the promise of universal topological quantum computing hinges on successfully integrating these fragile quantum states into practical devices. Achieving long-lived coherence, robust qubit manipulation, and scalable architectures will require continuous refinement of materials and interfaces. Yet the allure of quantum computation safeguarded by topological protection drives intense global research efforts.

As this quantum “goldmine” reveals new treasures, the fractional quantum anomalous Hall effect stands out as a beacon of hope toward fault-tolerant, scalable quantum machines. Through meticulous scientific endeavor, the dream of harnessing exotic parafermionic states may soon become reality, catapulting the field into a new era of quantum technology.

Subject of Research: Fractional Quantum Anomalous Hall Effect and its potential for universal topological quantum computation.

Article Title: Commentary on the fraction quantum anomalous Hall effect as a platform for Z₃ parafermions and topological quantum computation.

Web References: http://dx.doi.org/10.1016/j.scib.2025.04.063

Image Credits: ©Science China Press

Keywords: Quantum anomalous Hall effect, fractional quantum anomalous Hall effect, topological quantum computing, parafermions, Fibonacci anyons, moiré superlattices, twisted bilayer MoTe₂, rhombohedral multilayer graphene, quantum spin Hall states, topological superconductivity

A recent study helmed by Professor Fahad Mahmood of the University of Illinois has unveiled significant findings regarding magnetically intrinsic topological insulators, particularly focusing on manganese bismuth telluride (MnBi₂Te₄). This research not only sheds light on the band structure and electronic properties of MnBi₂Te₄ but also contests previous assertions regarding its electronic band gap, a contentious issue in the scientific community. The team’s findings mark the first demonstration of how external factors, specifically circularly polarized light, can manipulate the material’s properties in meaningful ways.

Diving deeper into the quantum characteristics of materials, this study elucidates the concept of a hidden gap in the electronic band structure of MnBi₂Te₄ under specific light conditions. While previous studies laid the groundwork, experimental evidence remained elusive, until now. The research clearly illustrates that MnBi₂Te₄ exhibits a gapless condition at equilibrium—an observation consistent with some prior studies—yet intriguingly develops a gap when subjected to different orientations of circularly polarized light.

Through rigorous experimentation, the research team employed angle-resolved photoemission spectroscopy (ARPES) to meticulously examine the band structure of MnBi₂Te₄. This technique detects the electron energies emitted when light shines upon a material’s surface and reveals how these energy levels shift under various external conditions. The intricacies of examining the electronic structure facilitate a comprehensive understanding of a material’s behavior, which is pivotal in describing its physical properties.

A defining characteristic of non-magnetic topological insulators is the adherence to time-reversal symmetry (TRS), a principle asserting that the fundamental laws of physics remain unchanged when time is reversed. For non-magnetic TIs, the electron currents exhibit this symmetry, which grants them their remarkable surface conduction properties. However, in breaking TRS, magnetic topological insulators introduce new quantum phases—one that could potentially yield transformative results for modern technology.

Magnetic topological insulators challenge the conventional understanding of TIs. Unlike their non-magnetic counterparts, the introduction of intrinsic magnetism allows for novel phenomena, such as the quantum anomalous Hall effect (QAHE), which appears when TRS is disrupted. The QAHE facilitates specific energy states that permit currents to flow with minimal resistance—an invaluable property for creating energy-efficient electronic devices. Yet, the inherent challenge is that these magnetic states are typically achieved through external magnetic fields, complicating their practicality for widespread adoption.

Professor Mahmood and his team grappled with the longstanding debate surrounding the existence of a band gap in MnBi₂Te₄. While some experimental research indicated observable gaps, conflicting studies cast doubt on these findings. In their endeavor to clarify this scientific ambiguity, the team utilized Floquet-Bloch manipulation—a state of the art technique that harnesses light to alter material properties and induce new quantum behaviors. By meticulously applying circularly polarized light to MnBi₂Te₄, the researchers successfully induced a band gap, delivering compelling evidence that aligns with theoretical predictions.

The results indicated a striking asymmetry between the responses of the material under right-circularly polarized (RCP) and left-circularly polarized (LCP) light. In the antiferromagnetic low-temperature phase, RCP light opened a gap that was nearly double the size induced by LCP light. This discrepancy in gap sizes robustly signifies the breaking of TRS. The research effectively establishes that altering the direction of light not only influences electron behavior but also has practical implications for the manipulation of quantum states.

Key to these findings is the ability to explore the electronic structure of materials through manipulation techniques such as Floquet-Bloch engineering. By applying these advanced methodologies, scientists now have a tangible way to influence the electronic properties of TIs without relying on cumbersome external fields, leading to more manageable experimental conditions. This breakthrough opens doors to further studies on varied materials and promises an expanded understanding of the mechanisms underlying quantum matter.

As the research progresses, there remains a wealth of uncharted territory awaiting exploration, particularly regarding the broader implications of manipulating magnetic TIs using advanced light techniques. The variations in band gaps identified by the research team not only highlight the interplay between magnetism and electronic states but also raise questions about the underlying mechanisms driving these behaviors.

In the pursuit of deeper insights into MnBi₂Te₄ and similar materials, the potential for real-world applications in electronic devices and quantum computing remains tantalizingly close. By deciphering the complex interactions within these systems, researchers hope to design and develop innovative technologies that could meet the growing demands of modern electronic systems.

The implications of this work extend far beyond the immediate study, as magnetic TIs like MnBi₂Te₄ promise to revolutionize the landscape of condensed matter physics and materials science. Understanding the roles of intrinsic properties like magnetism in determining material behavior sets the stage for potential breakthroughs that could lead to the next generation of electronics, emphasizing the significance of continued exploration in this exciting field.

Lastly, the findings are supported by significant federal grants and institutional support, highlighting the importance of collaborative efforts in driving forward scientific inquiry. As researchers continue to delve into the mysteries of topological insulators, the promise of uncovering further revolutionary discoveries in the physics of condensed matter remains vibrant.

Subject of Research: The hidden gap in the electronic band structure of manganese bismuth telluride (MnBi₂Te₄)
Article Title: Floquet–Bloch manipulation of the Dirac gap in a topological antiferromagnet
News Publication Date: 21-Jan-2025
Web References: https://doi.org/10.1038/s41567-024-02769-6
References: Nature Physics journal
Image Credits: Photo by Heather Coit, Illinois Grainger Engineering

Keywords

1. Topological insulators
2. Quantum anomalous Hall effect
3. Circularly polarized light
4. Manganese bismuth telluride
5. Floquet-Bloch manipulation
6. Electron band structure
7. Time-reversal symmetry