Design for magnetoelectric device may improve your memory

(American Institute of Physics) Conventional memory devices use transistors and rely on electric fields to store and read out information. An alternative approach uses magnetic fields, and a promising version relies on the magnetoelectric effect which allows an electric field to switch the magnetic properties of the devices. Existing devices, however, tend to require large magnetic and electric fields. One potential solution is a new switching element made from chromia. The researchers report their findings in Applied Physics Letters.

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